Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors
نویسندگان
چکیده
amorphous In–Ga–Zn–O thin-film transistors Tze-Ching Fung, Chiao-Shun Chuang, Charlene Chen, Katsumi Abe, Robert Cottle, Mark Townsend, Hideya Kumomi, and Jerzy Kanicki Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA Canon Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan Silvaco International, Santa Clara, California 95054, USA
منابع مشابه
8.4: Current Temperature Stress Study of RF Sputter a-InGaZnO TFTs
Current temperature stress (CTS) measurements were performed on RF sputter amorphous In-Ga-Zn-O (a-InGaZnO) thin film transistors (TFTs). We investigated the effect of stress current (ISTR) and stress temperature (TSTR) on the electrical properties of the aInGaZnO TFTs when stressed in both the linear and saturation regimes.
متن کاملElectrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows
This study investigates impacts of oxygen flow during the deposition of amorphous indium–gallium–zinc oxide (a-IGZO) channel layer with a radio frequency (r.f.) magnetron sputter on the electrical characteristics of the fabricated thin-film transistors (TFTs). Results indicate that as the film was deposited with a higher oxygen flow, the transfer curves are positively shifted while the field-ef...
متن کاملInstability of light illumination stress on amorphous In–Ga–Zn–O thin-film transistors
Suehye Park (SID Student Member) Abstract — Amorphous Edward Namkyu Cho Ilgu Yun In–Ga–Zn–O thin-film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength-varied light illumination tests are require...
متن کاملHigh performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
Articles you may be interested in Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment Appl. Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method Appl. Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes...
متن کاملDensity of states of amorphous In-Ga-Zn-O from electrical and optical characterization
We have developed a subgap density of states (DOS) model of amorphous In-Ga-Zn-O (a-IGZO) based on optical and electrical measurements. We study the optical absorption spectrum of the a-IGZO using UV-Vis spectroscopy. Together with the first-principles calculations and transient photoconductance spectroscopy from the literature, we determine that the valence band tail and deep-gap states are do...
متن کامل